Fabrication of CuInSe2 films and solar cells by the sequential evaporation of In2Se3 and Cu2Se binary compounds |
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Authors: | Sung Chan Park Doo Youl Lee Byung Tae Ahn Kyung Hoon Yoon Jinsoo Song |
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Affiliation: | a Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon 305-701, South Korea;b New Energy Department, Korea Institute of Energy Research, 71-2, Jang-dong, Yusung-gu, Taejon 305-343, South Korea |
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Abstract: | Cu2Se/InxSe(x≈1) double layers were prepared by sequentially evaporating In2Se3 and Cu2Se binary compounds at room temperature on glass or Mo-coated glass substrates and CuInSe2 films were formed by annealing them in a Se atmosphere at 550°C in the same vacuum chamber. The InxSe thickness was fixed at 1 μm and the Cu2Se thickness was varied from 0.2 to 0.5 μm. The CuInSe2 films were single phase and the compositions were Cu-rich when the Cu2Se thickness was above 0.35 μm. And then, a thin CuIn3Se5 layer was formed on the top of the CuInSe2 film by co-evaporating In2Se3 and Se at 550°C. When the thickness of CuIn3Se5 layer was about 150 nm, the CuInSe2 cell showed the active area efficiency of 5.4% with Voc=286 mV, Jsc=36 mA/cm2 and FF=0.52. As the CuIn3Se5 thickness increased further, the efficiency decreased. |
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Keywords: | CuInSe2 Cu2Se In2Se3 Evaporation Thin film solar cells |
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