| （英）分子束外延生长InAsSb材料的组分控制 |
| |
| 引用本文： | 孙庆灵,王禄,姚官生,曹先存,王文奇,孙令,王文新,贾海强,陈弘.（英）分子束外延生长InAsSb材料的组分控制[J].红外与毫米波学报,2016,35(4):386-388. |
| |
| 作者姓名： | 孙庆灵 王禄 姚官生 曹先存 王文奇 孙令 王文新 贾海强 陈弘 |
| |
| 作者单位： | 中国科学院物理研究所,中国科学院物理研究所 |
| |
| 摘 要： | 采用分子束外延方法在GaAs和GaSb衬底上生长了一系列InAsSb薄膜,研究了Sb组分与Sb4束流间关系.实验发现,在分子束外延生长中,相比As原子, Sb原子更易并入晶格中.利用该特性可较好实现InAsSb材料的组分控制.
|
| 关 键 词： | 分子束外延 铟砷锑 组分控制 |
| 收稿时间： | 2015/10/9 0:00:00 |
| 修稿时间： | 1/5/2016 12:00:00 AM |
Composition control of InAsxSb1-x grown by molecular beam epitaxy |
| |
| SUN Qing-Ling,WANG Lu,YAO Guan-Sheng,CAO Xian-Cun,WANG Wen-Qi,SUN Ling,WANG Wen-Xin,JIA Hai-Qiang and CHEN Hong.Composition control of InAsxSb1-x grown by molecular beam epitaxy[J].Journal of Infrared and Millimeter Waves,2016,35(4):386-388. |
| |
| Authors: | SUN Qing-Ling WANG Lu YAO Guan-Sheng CAO Xian-Cun WANG Wen-Qi SUN Ling WANG Wen-Xin JIA Hai-Qiang and CHEN Hong |
| |
| Affiliation: | Institute of Physics, Chinese Academy of Sciences,Institute of Physics, Chinese Academy of Sciences |
| |
| Abstract: | The molecular beam epitaxy growth of InAsSb film is presented. Dependence of Sb compositions on Sb4 fluxes was studied. Utilizing the high combination tendency of In and Sb atoms, the composition of InAsSb layer is highly controlled. |
| |
| Keywords: | molecular beam epitaxy InAsSb composition control |
|
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 |
|
点击此处可从《红外与毫米波学报》下载全文 |
|
