Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs |
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| Authors: | N. Stojadinovic I. Manic S. Djoric-Veljkovic V. Davidovic S. Golubovic S. Dimitrijev |
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| Affiliation: | 1. Eskişehir Technical University, Department of Mathematics, Ýki Eylül Campus, Eskişehir, 26555, Turkey;2. School of Computing and Mathematics, Keele University, Keele, ST5 5BG, UK;3. Faculty of Industrial Engineering Novo mesto, Novo mesto, Slovenia;1. Provincial Key Laboratory of Computer Integrated Manufacturing, Guangdong University of Technology, Guangzhou, Guangdong, China;2. School of Physics and Electrical Engineering, Shaoguan University, Shaoguan, Guangdong, China;1. Department of Civil Engineering, Semnan University, Semnan, Iran;2. Geotechnical Engineering Research Center, International Institute of Earthquake Engineering and Seismology, Iran |
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| Abstract: | The effects of pre-irradiation high electric field and elevated-temperature bias stressing on radiation response of power VDMOSFETs have been investigated. Compared to unstressed devices, larger irradiation induced threshold voltage shift and mobility reduction in high electric field stressed devices have been observed, clearly demonstrating inapplicability of electrical stressing for radiation hardening of power MOSFETs. On the other hand, larger irradiation induced threshold voltage shift in elevated-temperature bias stressed, and more considerable mobility reduction in unstressed devices have been observed, confirming the necessity of performing the radiation qualification testing after the reliability screening of these devices. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects. |
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