Etching behavior of CdTe in aqueous H2O2-HI-C6H8O7 solutions |
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| Authors: | Z. F. Tomashik V. G. Ivanits’ka V. N. Tomashik L. P. Shcherbak J. Franc P. Moravec P. Höschl J. Walter |
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| Affiliation: | 1.Lashkarev Institute of Semiconductor Physics,National Academy of Sciences of Ukraine,Kiev,Ukraine;2.Fed’kovich National University,Chernivtsi,Ukraine;3.Faculty of Mathematics and Physics, Institute of Physics,Charles University,Prague 2,Czech Republic |
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| Abstract: | This paper examines the dissolution behavior of the (111)A, (111)B, (110), and (100) surfaces of CdTe single crystals in aqueous H2O2-HI-C6H8O7 (citric acid) solutions. We have determined the dissolution rate of the crystals as a function of temperature and solution concentration, located the composition regions of polishing and selective etchants, and studied the microstructure and roughness of surfaces polished with optimized etchants. The etching behavior of CdTe is shown to depend on its crystallographic orientation. |
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