| 超薄栅氧MOS器件传统关态栅泄漏电流研究 |
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| 引用本文： | 胡仕刚,吴笑峰,席在芳. 超薄栅氧MOS器件传统关态栅泄漏电流研究[J]. 微电子学与计算机, 2011, 28(12) |
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| 作者姓名： | 胡仕刚 吴笑峰 席在芳 |
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| 作者单位： | 湖南科技大学信息与电气工程学院,湖南湘潭,411201 |
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| 基金项目： | 国家自然科学基金资助项目(61074051); 湖南省教育厅资助项目(10C0709); 湖南科技大学博士启动基金项目(E51080) |
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| 摘 要： | 理论分析了MOSFET关态泄漏电流产生的物理机制,深入研究了栅氧化层厚度为1.4nm MOSFET传统关态下边缘直接隧穿栅泄漏现象.结果表明：边缘直接隧穿电流服从指数变化规律;传统关态下边缘直接隧穿对长沟道器件的影响大于短沟道器件;衬底反偏在一定程度上减小边缘直接隧穿泄漏电流.
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| 关 键 词： | 直接隧穿 MOSFET 栅氧化层 |
Study on the Gate Leakage Current of Ultra-thin MOS Devices in Conventional Off-state |
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| HU Shi-gang,WU Xiao-feng,XI Zai-fang. Study on the Gate Leakage Current of Ultra-thin MOS Devices in Conventional Off-state[J]. Microelectronics & Computer, 2011, 28(12) |
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| Authors: | HU Shi-gang WU Xiao-feng XI Zai-fang |
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| Affiliation: | HU Shi-gang,WU Xiao-feng,XI Zai-fang(School of Information and Electrical Engineering,Hunan University of Science and Technology,Xiangtan 411201,China) |
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| Abstract: | The physical mechanism of off-state leakage current is analyzed Abstractly.The edge direct-tunneling(EDT) gate leakage current of MOSFET with 1.4 nm gate oxide biased in conventional off-state is studied in depth.The results showed that the change of the EDT current obeys index law,the EDT makes a greater impact on short-channel devices than that on long-channel device in conventional off-state,and the EDT current is reduced to a certain extent with the substrate biased reversely. |
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| Keywords: | direct tunneling MOSFET gate oxide |
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