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Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system |
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| Authors: | YE Romanyuk KM Yu ZV Lavrynyuk OV Parasyuk |
| Affiliation: | a Department of Chemistry, University of California, Berkeley, CA 94720, USA b Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA c Department of General and Inorganic Chemistry, Volyn State University, Lutsk, Ukraine d V.I. Vernadskii Institute for General and Inorganic Chemistry, Kyiv, Ukraine |
| Abstract: | The intermediate solid solution, γ-phase, exists in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system. It crystallizes in the cubic structure and has a wide homogeneity range. Single crystals of the γ-phase are grown by a modified Bridgman method and their composition, crystal structure, optical and electrical properties are studied. The band gap varies from 1.43 to 1.05 eV along the ‘Cu3Cd2In3S8’-‘CuCd2InSe4’ compositional section. The crystals are photosensitive, mostly p-type, with hole concentrations in the 1015-1016 cm−3 range and mobilities up to 18 cm2/V s. The results indicate that the γ-phase can be considered as a new absorbing material for thin-film solar cells. |
| Keywords: | CuInSe2 Crystal growth Solid solution |
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