Influence of the deposition and annealing conditions on the optical properties of amorphous silicon |
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| Authors: | A. I. Mashin A. V. Ershov D. A. Khokhlov |
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| Affiliation: | (1) N. I. Lobachevskii Nizhnii Novgorod State University, 603600 Nizhnii Novgorod, Russia |
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| Abstract: | The refractive index and extinction coefficient in the range 0.6–2.0 eV of amorphous silicon films deposited by electron-beam evaporation with variation of the substrate temperature, deposition rate, and anneal temperature in an air atmosphere are presented. The results are discussed in terms of variation of the Penn energy gap as a function of the deposition and treatment conditions. Fiz. Tekh. Poluprovodn. 32, 1390–1392 (November 1998) |
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