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REACTION PROBABILITIES OF ENERGETIC SPECIES AT GROWING DIAMOND FILM SURFACES BY MOLECULAR DYNAMICS SIMULATION
引用本文:Q.Y. Zhang,E. Bauer- Grosse. REACTION PROBABILITIES OF ENERGETIC SPECIES AT GROWING DIAMOND FILM SURFACES BY MOLECULAR DYNAMICS SIMULATION[J]. 金属学报(英文版), 2002, 15(1): 131-135
作者姓名:Q.Y. Zhang  E. Bauer- Grosse
作者单位:Q.Y. ZhangState Key Laboratory for Materials Modification by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian 116024,ChinaE. Bauer- GrosseSurface Science and Engineering Laboratory,Ecole des Mines de Nancy,Parc de Saurupt 54042 Na
基金项目:This work is supported by the National Natural Science Foundation (Grant No. 10075009),Sino-France Advance Research Program (PRA)
摘    要:A Molecular Dynamics (MD) simulation with Tersoff empirical many-body potential has been employed to investigate the growth processes of diamond film with energetic species deposition. In the present study, we have studied the reaction probabilities of energetic species with energies of 0.1eV to 10eV at the substrate temperature of 1100K. In the cases of the diamond growth on the surface with H passivation, the reaction probability of hydrocarbon species considerably increases when the species energy is higher than 2eV. This means that the diamond film can grow in the case of high incident species energy without the process of hydrogen abstraction, which is needed in the case of incident species with low energy. The reaction mechanism of energetic species on hydrogen passivated diamond surface is also discussed.

收稿时间:2001-07-31

REACTION PROBABILITIES OF ENERGETIC SPECIES AT GROWING DIAMOND FILM SURFACES BY MOLECULAR DYNAMICS SIMULATION
Q.Y.Zhang,E.Bauer-Grosse. REACTION PROBABILITIES OF ENERGETIC SPECIES AT GROWING DIAMOND FILM SURFACES BY MOLECULAR DYNAMICS SIMULATION[J]. Acta Metallurgica Sinica(English Letters), 2002, 15(1): 131-135
Authors:Q.Y.Zhang  E.Bauer-Grosse
Affiliation:1. State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
2. Surface Science and Engineering Laboratory, Ecole des Mines de Nancy, Parc de Saurupt 54042 Nancy Cedex, France
Abstract:A Molecular Dynamics (MD) simulation with Tersoff empirical many-body potential has been employed to investigate the growth processes of diamond film with energetic species deposition. In the present study, we have studied the reaction probabilities of energetic species with energies of 0.1eV to 10eV at the substrate temperature of 1100K. In the cases of the diamond growth on the surface with H passivation, the reaction probability of hydrocarbon species considerably increases when the species energy is higher than 2eV. This means that the diamond film can grow in the case of high incident species energy without the process of hydrogen abstraction, which is needed in the case of incident species with low energy. The reaction mechanism of energetic species on hydrogen passivated diamond surface is also discussed.
Keywords:molecular dynamics simulation   diamond film growth   reaction probability
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