半导体Si中稀土元素杂质与中子辐照缺陷的互作用研究

用１４ＭｅＶ中子辐照掺有稀土元素杂质及未掺稀土元素杂质的ｎ型Ｓｉ，并用红外吸收谱仪和四探针法测量其参数在辐照前后的变化。红外吸收谱测量表明，在单晶硅中的杂质未形成新的自身成份的红外吸收峰，但电阻率测量表明，掺入稀土元素Ｅｒ和Ｇｄ的Ｓｉ电阻率虽都随着中子注入量的增大而增大，但Ｓｉ（Ｅｒ）和Ｓ（的电阻率比率的变化远远小于Ｓｉ的变化。

A study on interaction Of rare-earth element impurity with neutron irradiation defects in Si

The parallel measurements were carried out on the n-type Si single crystal and the n-type Si single crystal doped with Er and Gd.All these crystals were irradiated with 14MeV neutrons. The measurementS of resistivity were made, and the infrared absorption spectra were recorded using a Nicolet 170SX FT-IR spectrophotometer.No new infrared absorption peaks of the rare-earth elements in Si were observed after irradiation.However,the measurements of resistivity indicated much smaller changes of resistivity ratio in Si(Er)or Si(Gd)than that in Si.