Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy

The growth of c-plane InGaN quantum dots via modified droplet epitaxy with AlGaN barrier layers is reported. The growth of the AlGaN layer underlying the InGaN quantum dot layer was carried out under H₂ at 1050 °C, while the capping AlGaN layer was grown at the same temperature (710 °C) and using the same carrier gas (N₂) as that used to grow the InGaN quantum dot layer to prevent decomposition of the InGaN. Atomic force microscopy of InGaN epilayers grown and annealed on high temperature AlGaN using identical growth conditions used for the quantum dot samples highlighted a narrower distribution of nanostructure heights than that obtained for similar growth on GaN. Scanning transmission electron microscopy (STEM) imaging combined with energy dispersive X-ray (EDX) analysis revealed the presence of a thin high aluminium content layer at the surface of both AlGaN layers, which is believed to be related to loss of Ga during temperature ramping processes. Micro-photoluminescence studies carried out at low temperature revealed near resolution-limited peaks while time-resolved measurements on these peaks demonstrated mono-exponential decay times between 1 and 4 ns, showing that quantum dots had successfully been formed between the AlGaN barriers. Temperature-dependant measurement of the emission lines revealed that quenching of the peak often occurred at ∼60–70 K, with some of the peaks exhibiting significant line broadening whilst others remained narrow.