Effect of proton radiation on the kinetics of phosphorescence decay in the ceramic material ZnS-Cu

The results of studying the dose dependences of the decay kinetics of phosphorescence excited by X-ray radiation in luminescent ZnS-Cu ceramic material before and after irradiation with 50-MeV protons are considered. An anomalous variation in the exponent of the hyperbolic phosphorescence curves was observed experimentally as the accumulated light sum increased. It is found from an analysis of the data obtained that two processes are involved in the decay: one of these is monomolecular and corresponds to the first-order kinetics; the other is bimolecular and corresponds to the second-order kinetics. Transitions of charge carriers delocalized from traps occur at the nonradiative-recombination centers induced by proton radiation. Recombination of these charge carriers at the emission centers in the course of decay is described by the second-order kinetics.