| Abstract: | When a CuInS2/CdS solar cell was fabricated by depositing CdS thin film with dopant In of 1.0 at% on ternary compound CuInS2 thin film with the lowest resistivity of 5.59 × 10−2 Ωcm, its best result was as follows: Voc = 461 mV, Isc = 26.9 mA, FF = 0.685, η = 5.66% under the illumination of 100 mW/cm2. And its series resistance and lattice mismatch was 5.1 Ω and 3.2%, respectively.Besides, a 4 layer structure solar cell of -CuInS2/high -CuInS2/high -CdS/low - CdS has been fabricated. When thickness of high - CuInS2 was 0.2 μm, its best result was as follows: Voc = 580 mV, Isc = 30.6 mA, FF = 0.697, η = 8.25%. An its series resistance and lattice mismatch were 4.3 Ω and 2.8%, respectively. |
