首页 | 本学科首页   官方微博 | 高级检索  
     


Selective formation of tungsten nanowires
Authors:Bien Daniel Cs  Saman Rahimah Mohd  Badaruddin Siti Aishah Mohamad  Lee Hing Wah
Affiliation:Nanoelectronics Cluster, MIMOS Berhad, Technology Park Malaysia, 57000 Kuala Lumpur, Malaysia. daniel.bien@mimos.my.
Abstract:We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formation is confined to the polysilicon regions; hence, the nanowires are formed without the need for lithography or for additional processing. The fabricated tungsten nanowires were observed to be perfectly aligned, showing 100% selectivity to polysilicon and can be made to be electrically isolated from one another. The electrical conductivity of the nanowires was characterized to determine the effect of its physical dimensions. The conductivity for the tungsten nanowires were found to be 40% higher when compared to doped polysilicon nanowires of similar dimensions.
Keywords:tungsten  nanowires  nanostructures  self-aligned  chemical vapor deposition  selective deposition
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号