| 宽带GaAsFET微波单片集成单刀双掷开关 |
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| 引用本文： | 郝冠军 夏先齐. 宽带GaAsFET微波单片集成单刀双掷开关[J]. 微波学报, 1994, 10(2): 40-44 |
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| 作者姓名： | 郝冠军 夏先齐 |
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| 作者单位： | 南京电子设备研究所(郝冠军，夏先齐)，南京电子设备研究所(李剑平) |
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| 摘 要： | 本文报道了一种采用串、并联ＦＥＴｓ结构的ＧａＡｓＭＭＩＣ单刀双掷开关。芯片尺寸为０．９７＊１．２３ｍｍ．在ＤＣ－１０ＧＨＺ频率范围内，插入损耗小于２．２ｄＢ，隔离度大于３２ｄＢ，反射损耗大于１２ｄＢ，并关时间小于１ｎｓ，在５ＧＨＺ下的功率处理能力大于２０ｄＢｍ。此开关具有极低的直流功率耗散。
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| 关 键 词： | 单片集成电路 单刀双掷开关 GaAsFET 微波开关 |
A Broadband GaAs MMIC SPDT Switch |
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| Hao Guanjun Xia Xianqi Li Jianping. A Broadband GaAs MMIC SPDT Switch[J]. Journal of Microwaves, 1994, 10(2): 40-44 |
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| Authors: | Hao Guanjun Xia Xianqi Li Jianping |
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| Affiliation: | Nanjian Electronic Equipment Institute |
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| Abstract: | A monolithic microwave broadband single pole double throw (SPDT) switch empolying series and shunt GaAs FETs is present. The chip size is 0. 97 x1. 23mm. In DC-10GHz freqency range , better than 2. 2dB insertion loss. 32dB Isolation and 12dB return loss have been achived . The switch demonstates a power handling cspacity of better than 20dBm at 5GHz and a switching time less than lns . It has very low DC power dissipation . |
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| Keywords: | GaAs MMIC SPOT Switch |
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