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氮氧化硅薄膜红外吸收特性的研究
引用本文:周顺,刘卫国,蔡长龙,刘欢. 氮氧化硅薄膜红外吸收特性的研究[J]. 兵工学报, 2011, 32(10): 1255-1259
作者姓名:周顺  刘卫国  蔡长龙  刘欢
作者单位:(1.西安电子科技大学 微电子学院, 陕西 西安 710071;2.西安工业大学 陕西省薄膜技术与光学检测重点实验室, 陕西 西安 710032)
基金项目:陕西省教育厅专项科研计划项目(2010JK590);陕西省重点实验室开放基金项目(ZSKJ200904)
摘    要:利用等离子体增强化学气相沉积法沉积氮氧化硅(SiOxNy)薄膜,通过X射线光电子能谱仪、傅里叶变换红外光谱仪、椭偏仪等表征技术,研究不同N2O与NH3流量比R条件下薄膜的组分、光学常数及红外吸收特性.研究结果表明:随着流量比R的增加,SiOxNy薄膜中O的相对百分含量提高,N含量降低,而Si含量基本不变;薄膜由于Si-...

关 键 词:光学  薄膜  氮氧化硅  红外吸收  等离子体增强化学气相沉积

Infrared Absorption Properties of Silicon Oxynitride Films
ZHOU Shun,LIU Wei-guo,CAI Chang-long,LIU Huan. Infrared Absorption Properties of Silicon Oxynitride Films[J]. Acta Armamentarii, 2011, 32(10): 1255-1259
Authors:ZHOU Shun  LIU Wei-guo  CAI Chang-long  LIU Huan
Affiliation:(1.School of Microelectronics, Xidian University, Xi’an 710071, Shaanxi, China;2.Shaanxi Province Thin Film Technology and Optical Test Open Key Laboratory, Xi’an Technological University,Xi’an 710032, Shaanxi,China)
Abstract:Silicon oxynitride films were deposited in a PECVD reactor.The N2O/NH3 flow ratio was varied in order to obtain different oxynitride compositions.The films were characterized by X-ray photoelectron spectroscopy,spectroscopic ellipsometry and Fourier transform infrared absorption spectroscopy.The compositions,optical constants and infrared optical absorption properties of silicon oxynitride films were investigated.The results show that the O atomic content increases,the N atomic content decreases,and the Si atomic content keeps nearly unchanged as the N2O/NH3 flow ratio increases.The silicon oxynitride films show a dominant infrared absorption peak due to the Si—O/Si—N bond,with the infrared absorption peak located between 11.6 μm(860 cm-1) and 9.4 μm(1 063 cm-1).The position of absorption peak also shifts to a shorter wavelength when the N2O/NH3 flow ratio increases.Meanwhile,the width of absorption peak increases firstly and then decreases with the increase in N2O/NH3 flow ratio.Moreover,the H content and the refractive index decrease with the increase in flow ratio.Compared with silicon oxide and silicon nitride films,the silicon oxynitride films with a specific composition have the largest width of absorption peak and the strongest intensity between 8 μm and 12 μm,which make them be well suited for the absorber of thermal detectors.
Keywords:optics  thin film  silicon oxynitride  infrared absorption  plasma enhanced chemical vapor deposition
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