半导体桥静电作用前后点火特性

对静电作用过的半导体桥和未经受静电作用的半导体桥进行D-最优化点火实验,得到全发火电压,并在全发火电压下点火,用示波器采集电压、电流以及发火时间等信号,用显微镜观察桥面的烧蚀情况并计算烧蚀面积。分析得到:静电对半导体桥的桥膜产生了损伤,静电电压越大,烧蚀面积越大;经过静电作用的桥与未静电作用的桥相比,全发火电压降低,发火能量减小,桥变得更加敏感。对全发火电压下的发火能量和发火时间进行t检验,得到21 kV是临界值,静电电压大于21 kV,静电对桥的性能影响明显;小于21 kV,静电对桥的影响不大。

Ignition Characteristics of Non-electrostatic Discharge and Electrostatic Discharge on Semiconductor Bridge

D-optimal method was employed in the experiments of semiconductor bridge (SCB) ignition. The SCB with and without electrostatic discharge (ESD) were used to ignite lead styphnate (LTNR). The ignition voltage,current and time were obtained by oscillograph,and the deck ablation area of SCB was measured by microscope. It was found the ESD could do some damage on SCB,and the higher ESD,the greater deck ablation area is. Compared with the non-ESD SCB,the ignition voltage and energy of ESD SCB were lower,which means that the ESD SCB was more sensitive. The ignition energy and ignition time were measured by t-test,which showed that the ESD of 21 kV was the critical point. With higher than 21 kV,ESD had greater effect on SCB,and the lower,the less.