首页 | 本学科首页   官方微博 | 高级检索  
     


A Sharp Interface Model of Intermediate-Phase Growth Under the Influence of Electromigration
Authors:Peng Zhou  William C. Johnson  Perry H. Leo
Affiliation:(1) Department of Materials Science & Engineering, Stanford University, 94305-4034 Stanford, California, USA;
Abstract:A sharp interface model has been developed to model intermediate-phase growth under the influence of electromigration in a binary system. Simulation results show that the phase growth rate depends on both the magnitude and the direction of the applied current. With the current density fixed, at early times, there is a parabolic growth behavior for the intermediate phase, while at longer times, there is a linear phase growth behavior when the electron flow aids diffusion of atoms; however, a limiting thickness is found when the electron flow hinders diffusion. Qualitative analysis shows that the longer time behavior also holds in a binary system with multiple intermediate phases present.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号