| 不同溅射气压制备W/Si多层膜的实时应力研究 |
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| 引用本文： | 张一志,冀斌,叶天明,陈进文,朱京涛,吴文娟.不同溅射气压制备W/Si多层膜的实时应力研究[J].光学仪器,2015,37(5):466-470. |
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| 作者姓名： | 张一志 冀斌 叶天明 陈进文 朱京涛 吴文娟 |
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| 作者单位： | 同济大学物理科学与工程学院先进微结构材料教育部重点实验室, 上海 200092,同济大学物理科学与工程学院先进微结构材料教育部重点实验室, 上海 200092,同济大学物理科学与工程学院先进微结构材料教育部重点实验室, 上海 200092,同济大学物理科学与工程学院先进微结构材料教育部重点实验室, 上海 200092,同济大学物理科学与工程学院先进微结构材料教育部重点实验室, 上海 200092,上海应用技术学院理学院, 上海 201418 |
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| 基金项目： | 国家自然科学基金(11305104,11375131);大科学装置联合基金重点项目(U1432244) |
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| 摘 要： | 研究了不同溅射气压条件下磁控溅射制备W/Si多层膜过程中的应力变化,使用X射线衍射仪测量了多层膜的结构,使用实时应力测量装置研究W/Si多层膜沉积过程中的应力演变。结果表明,在溅射气压从0.05Pa增加到1.10Pa的过程中,薄膜沉积过程中产生的压应力不断减小并最终过渡为张应力,应力值在溅射气压为0.60Pa时最小,研究结果对减小膜层应力具有指导意义。
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| 关 键 词： | 应力 多层膜 磁控溅射 溅射气压 W/Si |
| 收稿时间： | 1/8/2015 12:00:00 AM |
Stress of W/Si multilayers deposition under different sputtering pressure |
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| ZHANG Yizhi,JI Bin,YE Tianming,CHEN Jinwen,ZHU Jingtao and WU Wenjuan.Stress of W/Si multilayers deposition under different sputtering pressure[J].Optical Instruments,2015,37(5):466-470. |
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| Authors: | ZHANG Yizhi JI Bin YE Tianming CHEN Jinwen ZHU Jingtao and WU Wenjuan |
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| Affiliation: | MOE Key Laboratory of Advanced Micro-structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China,MOE Key Laboratory of Advanced Micro-structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China,MOE Key Laboratory of Advanced Micro-structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China,MOE Key Laboratory of Advanced Micro-structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China,MOE Key Laboratory of Advanced Micro-structured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China and College of sciences, Shanghai Institute of Technology, Shanghai 201418, China |
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| Abstract: | We studied the relationship between the conditions under different sputtering pressure and the change of stress during the deposition of W/Si multilayer films. The multilayer structures are measured by using X-ray diffractometer. An online stress measurement device was used to measure the stress evolution during the deposition. Experimental results clearly indicate that the compressive stress decreases with the increase of the sputtering pressure from 0.05 Pa to 1.10 Pa. Then the stress changes to tension. The value of stress reaches the minimum at sputtering pressure of 0.60 Pa. The result is instructive in reducing the film stress. |
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| Keywords: | stress multilayers magnetron sputtering sputtering pressure W/Si |
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