Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric |
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Authors: | Yang T Shen C Li MF Ang CH Zhu CX Yeo Y-C Samudra G Kwong D-L |
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Affiliation: | Inst. of Microelectron., Singapore; |
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Abstract: | New findings of interface trap passivation effect in negative bias temperature instability (NBTI) measurement for p-MOSFETs with SiON gate dielectric are reported. We show evidence to clarify the recent debate: the recovery of V/sub th/ shift in the passivation phase of the dynamic NBTI is mainly due to passivation of interface traps (N/sub it/), not due to hole de-trapping in dielectric hole traps (N/sub ot/). The conventional interface trap measurement methods, dc capacitance-voltage and charge pumping, seriously underestimate the trap density N/sub it/. This underestimation is gate bias dependent during measurement, because of the accelerated interface trap passivation under positive gate bias. Due to this new finding, many of previous reliability studies of p-MOSFETs should be re-investigated. |
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