| 忆阻器研究进展及应用前景 |
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| 引用本文： | 王乐毅.忆阻器研究进展及应用前景[J].电子元件与材料,2010,29(12). |
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| 作者姓名： | 王乐毅 |
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| 摘 要： | 回顾了忆阻器的起源与发展,论述了忆阻器的物理特性,重点介绍了TiO2与TiO2–x材料制造的忆阻器特性。探索了忆阻器的功能、应用和有待解决的难题,讨论了忆阻器用于存储器件的优点和结构特点,以及其在模拟神经网络方面的应用前景。
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| 关 键 词： | 忆阻器 非线性 综述 存储器 |
Research progress of the memristor and its application foreground |
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| WANG Leyi.Research progress of the memristor and its application foreground[J].Electronic Components & Materials,2010,29(12). |
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| Authors: | WANG Leyi |
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| Abstract: | The origin and development of the memristor are reviewed.The physical characteristics of the memristor are discussed,memristor characteristics of being made from TiO2 and TiO2–x materials are showed.The functions,using ways and problems of needing to solve of the memristor are explored.The advantages and structure properties of the memristor used in memories and its application foreground at simulating neural networks are discussed. |
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| Keywords: | memristor nonlinear review memory |
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