| 隧道场感应结晶体管(TFIJT)的实验研究 |
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| 引用本文： | 郭维廉,梁惠来,宋梅,吕守泰.隧道场感应结晶体管(TFIJT)的实验研究[J].固体电子学研究与进展,1984(3). |
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| 作者姓名： | 郭维廉 梁惠来 宋梅 吕守泰 |
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| 作者单位： | 天津大学电子工程系
(郭维廉，梁惠来，宋梅)，天津第三半导体器件厂(吕守泰) |
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| 摘 要： | 本文叙述了一种以隧道场感应结作为发射结的新型晶体管。初步实验表明:器件具有电流增益功能与极低的h_(FE)温度系数,可望制成温度稳定性极高的器件。
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Experimental Investigation on Tunnelling Field-Induced Junction Transistor (TFIJT) |
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| Abstract: | In this paper, we have proposed and fabricated a new type of transistor in which the tunnelling field-induced junction is used as an emitter. The experimental results show that this device has some current gain and an extremely low temperature coefficient of hSE. Therefore TFIJT is expected to be made as a device with extremely high temperature stability. |
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