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六方氮化硼在二维晶体微电子器件中的应用与进展
引用本文:高渤翔,方茹,吴天如. 六方氮化硼在二维晶体微电子器件中的应用与进展[J]. 微纳电子技术, 2021, 0(2): 107-113,157
作者姓名:高渤翔  方茹  吴天如
作者单位:中国科学院;中国科学院大学;中国电子科技集团公司第三十二研究所
基金项目:中国科学院战略性先导科技专项(XDB30000000)。
摘    要:六方氮化硼(h-BN)因其优异的性能和潜在的应用前景而受到广泛关注.着眼于h-BN在微电子器件领域中的发展与应用,总结了近年来国内外通过化学气相沉积(CVD)方法实现h-BN的高质量、大规模可控制备及图形化的代表性工作.围绕h-BN的高介电常数、原子级平滑表面、高导热性和高稳定性,重点介绍了h-BN在二维晶体介电衬底、...

关 键 词:二维(2D)材料  六方氮化硼(h-BN)  微电子器件  介电衬底  隧穿器件  存储阵列  封装材料

Application and Progress of Hexagonal Boron Nitride in Two-Dimensional Crystal Microelectronic Devices
Gao Boxiang,Fang Ru,Wu Tianru. Application and Progress of Hexagonal Boron Nitride in Two-Dimensional Crystal Microelectronic Devices[J]. Micronanoelectronic Technology, 2021, 0(2): 107-113,157
Authors:Gao Boxiang  Fang Ru  Wu Tianru
Affiliation:(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;The 32^(nd)Research Institute,China Electronics Technology Group Corporation,Shanghai 201808,China)
Abstract:Due to excellent properties and potential application prospects,Hexagonal boron nitride(h-BN)has received extensive attention.Based on the development and application of h-BN in microelectronic devices,the recent representative studies of high-quality,large-scale controllable preparation and patterning of h-BN achieved by chemical vapor deposition(CVD)method at home and abroad are summarized.The research progresses of h-BN for two-dimensional crystal dielectric substrates,the thermal management platform of semiconductor devices and integrated circuit packaging materials are reviewed emphatically from the aspects of the high dielectric constant,atomic level smooth surface,high thermal conductivity and high stability of h-BN.The research results of the application of h-BN in tunneling devices and memory arrays are briefly presented.Finally,the obtained achievements of large-scale applications of h-BN in new microelectronic devices are summarized,and the future research and trends of the field are prospected.
Keywords:two-dimensional(2D)material  hexagonal boron nitride(h-BN)  microelectronic device  dielectric substrate  tunneling device  memory array  packaging material
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