| 双槽电化学腐蚀法制备多孔硅的孔隙率研究 |
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| 引用本文： | 房振乾,胡明,窦雁巍. 双槽电化学腐蚀法制备多孔硅的孔隙率研究[J]. 压电与声光, 2007, 29(2): 230-232,236 |
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| 作者姓名： | 房振乾 胡明 窦雁巍 |
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| 作者单位： | 天津大学,电子信息工程学院,天津,300072 |
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| 基金项目： | 国家自然科学基金;天津市自然科学基金 |
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| 摘 要： | 采用双槽电化学腐蚀法制备多孔硅,主要研究了腐蚀条件及硅基体掺杂浓度对多孔硅孔隙率的影响,并且结合原子力显微镜(AFM)、扫描电子显微镜(SEM)技术对所制备的多孔硅的表面形貌和断面形貌进行了分析表征。研究发现,通过合理的选择工艺参数,可以制备具有特定孔隙率的多孔硅薄膜,可广泛的应用于微电子机械系统(MEMS)技术中。
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| 关 键 词： | 多孔硅 双槽电化学腐蚀法 腐蚀条件 掺杂浓度 孔隙率 |
| 文章编号： | 1004-2474（2007）02-0230-03 |
| 修稿时间： | 2006-06-19 |
Study on the Porosity of Porous Silicon by Double-tank Electrochemical Corrosion Method |
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| FANG Zhen-qian,HU Ming,DOU Yan-wei. Study on the Porosity of Porous Silicon by Double-tank Electrochemical Corrosion Method[J]. Piezoelectrics & Acoustooptics, 2007, 29(2): 230-232,236 |
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| Authors: | FANG Zhen-qian HU Ming DOU Yan-wei |
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| Abstract: | Porous silicon(PS) was prepared in a double-tank cell by using the electrochemical corrosion method.The effects of the etching conditions and doping concentration of silicon wafer on the porosity of PS film were investigated.The PS surface and cross-sectional morphologies were characterized by AFM,SEM,respectively.It was found that a certain porosity of PS film to be widely used in MEMS technology can be obtained by selecting optimal process parameters. |
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| Keywords: | porous silicon double-tank electrochemical corrosion method etching conditions doping concentration porosity |
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