IGBT模块封装工艺的研究

随着能源技术的发展,电力电子器件日益受到人们的关注,绝缘栅双极型晶体管(insulated-gate bipolar transistor,IGBT)作为功率半导体的主流器件在能源领域得到了广泛应用。目前IGBT模块已经在电动汽车、高速铁路以及电力设备等领域发挥着不可替代的作用。IGBT模块的封装作为一个新兴产业越来越受到人们的关注。以IGBT模块的封装工艺为研究对象,确定模块封装两次焊接的顺序,选择两次焊接的焊料,确定焊接温度及回流温度曲线。最终焊接效果良好,有效地提高了IGBT模块封装的工艺水平。

Research of IGBT Model Packaging Process

With the development of energy technologies, power electronic devices have been paid more attention than before. As the mainstream devices of power semiconductors, insulated-gate bipolar transistors (IGBTs) have been widely used in the field of energy. Now the IGBT modules play an irreplaceable role in electric automobile, high-speed railway, power equipment and other fields. The IGBT module packaging got more and more attention of people as an emerging industry. This paper started with the IGBT module packaging process, determinate the welding sequence, selected the solder, determinate the welding temperature and reflow temperature profile and improved the model packaging process.