Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors |
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Authors: | Zhu Qiaozhi and Wang Dejun |
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Affiliation: | School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China;School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China |
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Abstract: | The effects of wet re-oxidation annealing (wet-ROA) on the shallow interface traps of n-type 4H-SiC metal-oxide-semiconductor (MOS) capacitors were investigated by Gray-Brown method and angle-dependent X-ray photoelectron spectroscopy technique. The results present the energy distribution of the density of interface traps (Dit) from 0 to 0.2 eV below SiC conduction band edge (EC) of the sample with wet-ROA for the first time, and indicate that wet-ROA could reduce the Dit in this energy range by more than 60%. The reduction in Dit is attributed to the reaction between the introduced oxygen and the SiOxCy species, which results in C release and SiOxCy transformation into higher oxidation states, thus reducing the SiOxCy content and the SiOxCy interface transition region thickness. |
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Keywords: | SiC MOS shallow interface traps wet-ROA interface transition region |
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