| 用于测辐射热计热敏材料的多晶锗硅薄膜的研究 |
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| 引用本文： | 岳瑞峰, 董良, 刘理天,. 用于测辐射热计热敏材料的多晶锗硅薄膜的研究[J]. 电子器件, 2006, 29(4): 1000-1003 |
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| 作者姓名： | 岳瑞峰 董良 刘理天 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084 |
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| 基金项目： | 国家自然科学基金;面向21世纪教育振兴行动计划(985计划) |
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| 摘 要： | 根据测辐射热计对热敏感材料的要求,采用超高真空化学气相淀积(UHVCVD)法制备出多晶Si0.7Ge0.3薄膜,研究了B离子注入剂量、退火工艺与电导率和电阻温度特性的相关性,因此确定出了最佳的工艺条件,并利用其制备出了探测率高达3.75×108cmHz1/2.W-1的测辐射热计。
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| 关 键 词： | 多晶锗硅薄膜 测辐射热计 UHVCVD 热敏材料 |
| 文章编号： | 1005-9490（2006）04-1000-04 |
| 收稿时间： | 2005-11-07 |
| 修稿时间： | 2005-11-07 |
Studies on Poly Si_(0.7)Ge_(0.3) Films Deposited by UHVCVD as Thermal Sensitive Material for Bolometer |
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| YUE Rui-feng,DONG Liang,LIU Li-tian. Studies on Poly Si_(0.7)Ge_(0.3) Films Deposited by UHVCVD as Thermal Sensitive Material for Bolometer[J]. Journal of Electron Devices, 2006, 29(4): 1000-1003 |
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| Authors: | YUE Rui-feng DONG Liang LIU Li-tian |
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| Affiliation: | Institute of Microelectronics; Tsinghua University; Beijing 100084; China |
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| Abstract: | According to t he requirement s of bolometer on t hermal - sensitive material s , t he poly Si0. 7 Ge0. 3t hin film was deposited by ult rahigh vacuum chemical vapour deposition (U HVCVD) system , and t he de2pendences of t he temperat ure coefficient of resistance and elect rical conductivity of t he film on B - ion im2plantation dose and annealing p rocesses have been investigated. Therefore , t he optimal process parameter sof fabricating poly Si0. 7 Ge0. 3 film for thermal sensitive material were obtained. Using t his material , we de2veloped a bolometer wit h detectivity of as big as 3. 75 ×108 cm ·Hz1/ 2 / W. |
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| Keywords: | UHVCVD |
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