Shot noise in back biased p-n silicon diodes |
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Authors: | A van der Ziel |
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Affiliation: | Electrical Engineering Department, University of Minnesota, Minneapolis, MN 55455, USA |
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Abstract: | An earlier calculation of the noise due to generation of carriers in the space charge region in a p-n silicon diode by Lauritzen and by Scott and Strutt is corrected for the fact that the field distribution in the space charge region of a p-n junction is linear instead of uniform. If the noise is expressed as SI(f) = 2eIΓ2, we find in a p+n or n+p junction, instead of found previously. |
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