IMPATT oscillators with enhanced leakage current |
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| Authors: | P.E. Cottrell J.M. Borrego R.J. Gutmann |
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| Affiliation: | IBM System Products Division, Essex Junction, Vermont 05452, U.S.A.;Electrophysics and Electronic Engineering Division, Rensselaer Polytechnic Institute, Troy, New York 12181, U.S.A. |
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| Abstract: | The behavior of IMPATT oscillators with enhanced leakage current has been experimentally evaluated by irradiating operating diodes with transient ionizing radiation. Leakage current was induced in diffused junction GaAs and silicon X-band IMPATT diodes by irradiation with 100 nsec pulses of 10 MeV electrons. With increasing leakage current, the oscillator RF power decreases and the frequency of oscillation increases. A large signal circuit model of the IMPATT diode is developed which correlates well with experimental measurements. |
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