Stabilizing effects for the supercritical GaAs n+nn+-transferred electron amplifier |
| |
Authors: | Bengt Källbäck |
| |
Affiliation: | Microwave Institute Foundation, S-10044 Stockholm 70, Sweden |
| |
Abstract: | In this paper effects of importance for the stabilization of supercritical n+nn+ GaAs transferred electron devices are considered. By small-signal impedance calculations and measurements it is shown that doping- as well as temperature gradients of correct polarity reduce the device negative resistance and enhance stability. It is also found that an increasing doping density reduces the negative resistance. Finally it is demonstrated that relaxation effects have a profound influence on the impedance, and that such effects have to be included in a small-signal analysis in order to give reasonable agreement with measurements. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|