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Transient emission and generation currents in Metal-Insulator-Semiconductor capacitors
Authors:LS Wei  JG Simmons
Affiliation:Atomic Energy of Canada, Commercial Products, Ottawa, Canada;Electrical Engineering Department, University of Toronto, Toronto, Canada
Abstract:The transient current of an MIS (metal-insulator-silicon) capacitor which is subjected to a voltage step (or pulse) has been investigated. It is shown that the different magnitudes and shapes exhibited by the transient current depend on the initial and final biasing conditions. By varying these conditions the three main contributing current components, namely, surface emission, surface generation and bulk generation can be identified.
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