A theoretical and experimental study of recombination in silicon p−n junctions

This paper describes the results of a numerical solution of the one-dimensional transport equations as applied to p?n junctions. Generation-recombination is included in the model, and the method of solution is based on that of De Mari. The modifications of Choo are included to allow the solution of problems involving heavy recombination. Theoretical current-voltage characteristics are presented for both uniform and non-uniform distributions of recombination centres, and a comparison is made with experimental results on carbon implanted, silicon, p?n diodes. The dependence of the $\text{I}\text{V}$ characteristics on activation energy, capture cross sections, and density of recombination centres is described. Good agreement between theory and experiment is obtained, and the results suggest that the $\text{I}\text{V}$ characteristics can be described by the sum of two independant components of current. The first component is the generation-recombination current with an exp (eV/mkT) dependence, and the second is the diffusion current with an exp (eV/kT) dependance.