Resistors and diodes produced by Al-implantation in silicon

Al⁺-ions are implanted to obtain diodes and resistors with a sheet resistivity higher than 100 kΩ/□. Breakdown voltage of the diodes is between 240 V and 300 V. The conductivity of the resistors shows approximately a square root dependence on the implantation dose after a 500°C anneal. The temperature coefficient is α ≈ 3 × 10^?3 K^?1. The values are compared with results of B⁺-ion implantations.