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氧化锌电子结构的压力效应的理论研究
引用本文:李凡生,张飞鹏,余小英,房慧,张忻,路清梅. 氧化锌电子结构的压力效应的理论研究[J]. 压电与声光, 2015, 37(5): 877-882
作者姓名:李凡生  张飞鹏  余小英  房慧  张忻  路清梅
作者单位:(1. 广西民族师范学院 物理与电子工程系,广西 崇左 532200;,2. 河南城建学院 数理学院,河南 平顶山 467036;,3. 北京工业大学 材料科学与工程学院,新型功能材料教育部重点实验室,北京 100124)
基金项目:国家自然科学基金资助项目(11347141, 21465004);广西民族师范学院博士科研启动基金资助项目(2013RCBS001);广西民族师范学院学科带头人科研启动基金资助项目(2014RCDT002);广西高等学校科学技术研究基金资助项目(2013YB268)
摘    要:基于平面波函数密度泛函理论研究了不同压力条件下纤锌矿结构氧化锌的晶格结构和电子结构。计算结果表明,氧化锌的晶格参数和Zn—O键长随外压力的增加先增大后逐渐减小,晶胞纵横轴长之比增大,晶格对称性保持不变;带隙类型均为直接带隙,其宽度随外压力增加先降低后逐渐增大,零压力下其存在着0.908eV的直接带隙,在最大压力100GPa下其带隙达0.993eV;费米能级附近的状态密度随压力增加有增大的趋势,电子局域化趋势明显。分析结果表明,随着外压力的增加,氧化锌费米能级下方附近的载流子有效质量先增大后减小;导带的载流子有效质量均较小。外界加力还改变了氧化锌体系的电子分布情况。

关 键 词:氧化锌  密度泛函  压力效应  晶体结构  电子结构

Theoretical Investigation of Influences of Pressure on Electronic Structure of Zinc Oxide
LI Fansheng,ZHANG Feipeng,YU Xiaoying,FANG Hui,ZHANG Xin and LU Qingmei. Theoretical Investigation of Influences of Pressure on Electronic Structure of Zinc Oxide[J]. Piezoelectrics & Acoustooptics, 2015, 37(5): 877-882
Authors:LI Fansheng  ZHANG Feipeng  YU Xiaoying  FANG Hui  ZHANG Xin  LU Qingmei
Affiliation:(1. Dept. of Physics and Electronic Engineering, Guangxi Normal University for Nationalities,Chongzuo 532200,China;,2. Institute of Physics, Henan University of Urban Construction, Pingdingshan 467036,China;,3. Key Lab. of Advanced Functional Materials, Chinese Ministry of Education, College of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,China)
Abstract:The crystal structure and electronic sturcture of the Wurtzite type ZnO at different exoteric pressures have been investigated based on the density functional theory calculations of the plane wave. The results show that the lattice parameters of ZnO and ZnO bond length are increased firstly and then decreased with the increase of the external pressure, the ratio of vertical and horizontal axis increases, while the symmety of the structure remain unchanged. The band gaps are all direct gap, the gap width decreases firstly and then increases along with increasing the exoteric pressure. The band gap is 0.908 eV for the un pressed ZnO and the band gap of the ZnO at 100 GPa is increased to 0.993 eV. The density of states near Fermi level can be increased by increasing the exoteric pressure and the localization of the electrons can be enhanced. The analyzing results has shown that the effective mass of the carriers under the Fermi level can be enhanced firstly and then depressed by increasing the exoteric pressure, the effective mass of the carriers above the Fermi level is slightly light. The distribution of the electrons at different orbitals can be modulated by altering the exoteric pressure.
Keywords:Zinc Oxide  density functional theory   pressure effects  crystal geometric structure  electronic structures
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