A new trench bipolar transistor for RF applications |
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| Authors: | Hueting R.J.E. Slotboom J.W. Melai J. Agarwal P. Magnee P.H.C. |
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| Affiliation: | Philips Res., Leuven, Belgium; |
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| Abstract: | A new vertical trench SiGe heterojunction bipolar transistor (HBT) is proposed that improves the tradeoff between the cutoff frequency (f/sub T/) and the off-state collector-base breakdown voltage (BV/sub cbo/). Extensive device simulations show that a record f/sub T//spl middot/BV/sub cbo/ product of about 2375 GHz/spl middot/V can be obtained for an HBT having a trench field plate connected to the emitter and a linearly graded doping profile in the collector drift region, while about 700 GHz/spl middot/V can be obtained for a standard optimized HBT. This large improvement is explained mainly by the suppression of the base-widening effect. |
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