| 无压烧结Si3N4与表面镀钛膜之间的固态化学反应过程 |
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| 引用本文： | 冼爱平,斯重遥.无压烧结Si3N4与表面镀钛膜之间的固态化学反应过程[J].金属学报,1989,25(6):143-145. |
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| 作者姓名： | 冼爱平 斯重遥 |
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| 作者单位： | 中国科学院金属研究所 研究实习员(冼爱平)，中国科学院金属研究所 沈阳(110015)(斯重遥) |
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| 摘 要： | 用X射线衍射技术研究了在Si_3N_4陶瓷与表面镀钛膜之间的固态化学反应过程,当反应温度不超过973K时,Ti与Si_3N_4之间不反应;温度在1073—1123K时,反应产物为Ti_2N和Ti_5Si_3,温度达到1173K时,反应产物为TiN和Ti_5Si_4,温度达到1273K时,反应产物为TiN和Ti_5Si_4。在整个反应过程中,Si_3N_4陶瓷基体相的晶格常数未发生变化,说明Ti原子不能溶入Si_3N_4陶瓷的晶格之中。
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| 关 键 词： | 烧结 氮化硅 钛 镀钛膜 固态反应 |
| 收稿时间： | 1989-06-18 |
| 修稿时间： | 1989-06-18 |
SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3 N_4 SUBSTRATE AND Ti-DEPOSITED FILM |
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| XIAN Aiping,SI Zhongyao Institute of Metal Research,Academia Sinica,Shenyang XIAN Aiping.SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3 N_4 SUBSTRATE AND Ti-DEPOSITED FILM[J].Acta Metallurgica Sinica,1989,25(6):143-145. |
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| Authors: | XIAN Aiping SI Zhongyao Institute of Metal Research Academia Sinica Shenyang XIAN Aiping |
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| Affiliation: | XIAN Aiping,SI Zhongyao Institute of Metal Research,Academia Sinica,Shenyang XIAN Aiping,Institute of Metal Research,Aeadxmiav Sinica,ShenYang |
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| Abstract: | The chemical reaction as solid state between pressless sintered Si_3N_4 substrate andTi-deposited film has been studied by X-ray diffraction analysis. The reaction all depends up-on temperature. It seems no reaction below 973 K; Ti_2N and Ti_5Si_3 are the reaction productsfrom 1073 to 1123K, and finally, till 1173K, the Ti-deposited film over Si_3N_4 substrate willexhaust itself and the reaction products change into TiN and Ti_5Si_4. The lattice constant of Si_3N_4is unaltered thronghout postannealing. This implies that the Ti atoms will never dissolve intoSi_3N_4 lattice. |
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| Keywords: | Ti Si_3N_4 interface solid reaction |
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