Grain Growth During Gas-Pressure Sintering of β-Silicon Nitride

The microstructures of gas-pressure-sintered materials from β-Si₃N₄ powder were characterized in terms of the diameter and aspect ratio of the grains. The size distributions of diameters in materials fabricated by heating for 1 h at 1850° to 2000°C were nearly constant when they were normalized by average diameters because of normal grain growth. The rate-determining step in the densification and grain growth was expected to be the diffusion of materials through the liquid phase. The activation energy for grain growth was 372 kJ/mol. The average aspect ratio of the grains was 3 to 4, whereas that of large grains was smaller because of shape accommodation. The fracture toughness was about the same as that of material from α-Si₃N₄ powder despite the smaller aspect ratio of the grains