Poly-Si thin-film transistors on steel substrates |
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Authors: | Howell RS Stewart M Kamik SV Saha SK Hatalis MK |
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Affiliation: | Display Res. Lab., Lehigh Univ., Bethlehem, PA ; |
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Abstract: | We report the successful fabrication of poly-Si thin-film transistors (TFTs) on stainless steel substrates. The TFTs were fabricated on a 500 μm thick polished stainless steel substrate using furnace crystallized amorphous Si deposited by PECVD. These devices typically have threshold voltages of 8.6 V, linear effective mobilities of 6.2 cm2/V·s and subthreshold slopes of 0.93 decade/V. This work demonstrates the feasibility of poly-Si TFTs on stainless steel substrates and identifies some critical issues involved in poly Si processing on stainless steel. This will enable the fabrication of arrays with integrated drivers on a cheap, flexible and durable substrate for various displays and other large area array microelectronic applications |
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