| 氧分压对纳米ZnO薄膜光致发光特性的影响 |
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| 引用本文： | 薛华,张国恒,张浩. 氧分压对纳米ZnO薄膜光致发光特性的影响[J]. 半导体技术, 2009, 34(2) |
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| 作者姓名： | 薛华 张国恒 张浩 |
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| 作者单位： | 西北民族大学电子材料国家民委重点实验室,兰州,730030;西北民族大学电子材料国家民委重点实验室,兰州,730030;西北民族大学电子材料国家民委重点实验室,兰州,730030 |
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| 基金项目： | 国家民委科研项目，甘肃省自然科学基金，西北民族大学校中青年科研基金 |
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| 摘 要： | 采用射频反应磁控溅射法在玻璃衬底上成功制备出具有c轴高择优取向的ZnO薄膜,利用X射线衍射仪及荧光分光光度计研究了氧分压变化对ZnO薄膜的微观结构及光致发光特性的影响.结果表明,当工作气压恒定时,合适的氧分压能够提高ZnO薄膜的结晶质量.对样品进行光致发光测量时,所制备ZnO薄膜样品在400 mm左右出现较强紫光发射,在446 nm出现蓝光发射,经分析认为紫光发射来源于激子复合,而446 nm左右的蓝光发射来源于ZnO薄膜内部的Znj缺陷.
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| 关 键 词： | 氧化锌薄膜 射频磁控溅射 X射线衍射 光致发光 |
Influence of Oxygen Partial Pressure on the Photoluminescence Properties of Nano ZnO Films |
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| Xue Hua,Zhang Guoheng,Zhang Hao. Influence of Oxygen Partial Pressure on the Photoluminescence Properties of Nano ZnO Films[J]. Semiconductor Technology, 2009, 34(2) |
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| Authors: | Xue Hua Zhang Guoheng Zhang Hao |
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| Affiliation: | Key Laboratory for Electronic Materials of the State National Affairs Commission of PRC;Northwest University for Nationality;Lanzhou 730030;China |
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| Abstract: | ZnO thin films with c-axis preferred orientation were prepared on glass substrate by RF co-reactive magnetron sputtering technique,the influence of oxygen partial pressures on the microstructure and optical properties of ZnO thin films were studied by X-ray diffractometry(XRD)and fluorescence spectrophotometer.XRD results show that when the working pressure is kept in constant,the growth behavior of the ZnO thin film is mainly decided by the density of oxygen in the space where the sample is deposited,and t... |
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| Keywords: | ZnO film RF magnetron sputtering X-ray diffraction photoluminescence |
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