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透明铁电PLZT陶瓷的短路光电流初探
引用本文:刘芸 许恒生. 透明铁电PLZT陶瓷的短路光电流初探[J]. 压电与声光, 1992, 14(1): 30-33
作者姓名:刘芸 许恒生
作者单位:西安交通大学(刘芸,许恒生,武明堂),西安交通大学(姚熹)
基金项目:国家自然科学基金资助项目
摘    要:本文对透明铁电PLZT陶瓷的改性及未改性试样进行了短路光电流测试,对PLZT光电图象存储器的微观机制进行了探讨。结果表明:光激载流子的输运效应、热释电效应、光生伏打效应都对PLZT陶瓷的图象存储有贡献,光电流峰值与光敏度的数量级有相应的变化,光电流峰值与光强成正比,稳态短路光生伏打电流与光强成正比,光电流与暗电流之比反映了存储图象的光敏度。

关 键 词:PLZT陶瓷 短路光电流

Discussion of Short-Circuit Photocurrent for Transparent PFE PLZT Ceramics
Liu Yun Xu Hengsheng Wu Mingtang Yao Xi. Discussion of Short-Circuit Photocurrent for Transparent PFE PLZT Ceramics[J]. Piezoelectrics & Acoustooptics, 1992, 14(1): 30-33
Authors:Liu Yun Xu Hengsheng Wu Mingtang Yao Xi
Affiliation:Xi'an Jiaotong University
Abstract:Micromechanism of PFE image storage is presented by measurement of short-circuit photocurrent for intrinsic and surface-modified PLZT transparent ceramics.Experimental results indicated that transport effect of photoinduced carrier, pyroelectric effect and photovoltaic effect contribute to its storage; the peak photo-current is identified with the order of magnitude of photosensitivity and proportional to light intensity; the steady-state photovoltaic current is also a linear function of light intensity. In addition, the ratio of photocurrent to dark current shows photo-sensitivity of image storage.
Keywords:PLZT ceramics   short-circuit photocurrent
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