Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novelcomposite channels design |
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Authors: | Chertouk M Heiss H Xu D Kraus S Klein W Bohm G Trankle G Weimann G |
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Affiliation: | Walter-Schottky Inst., Tech. Univ. Munchen; |
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Abstract: | We report on fabrication and performance of novel 0.13 μm T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite InGaAs channels, combining the superior transport properties of In0.52Ga0.48As with low-impact ionization in the In0.32Ga0.68As subchannel. These devices exhibit excellent DC characteristics, high drain currents of 750 mA/mm, extrinsic transconductances of 600 mS/mm, combined with still very low output conductance values of 20 mS/mm, and high channel and gate breakdown voltages. The use of a composite InGaAs channels leads to excellent cut-off frequencies: fmax of 350 GHz and an fT 160 GHz at VDS=1.5 V. These are the best microwave frequency results ever reported for any FET on GaAs substrate |
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