| Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field |
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| 引用本文： | 宇慧平,王敬,隋允康,戴小林,安国平. Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field[J]. 中国化学工程学报, 2006, 14(1): 8-14. DOI: 10.1016/S1004-9541(06)60031-1 |
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| 作者姓名： | 宇慧平 王敬 隋允康 戴小林 安国平 |
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| 作者单位： | [1]Numerical Simulation Center of Engineering, Beijing University of Technology, Beijing 100022, China [2]General Research Institute for Nonferrous Metals, Beijing 100088, China |
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| 基金项目： | Supported by the Ph.D. Start-up Fund of Beijing University of Technology （No.127-00227）. |
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| 摘 要： | 1 INTRODUCTION The development of IC-technology requires large size Si wafer and Czochralski (Cz) process has domi-nated the production of single crystals for most of the materials used in the microelectronic industry. It was reported that the melt flow is stable when the wafer diameter is small. Converged solutions were obtained by using a laminar model. For example, Xiao and Derby[1] simulated the flow of oxide melt at Grashof number Gr =2.54×105, Oshima et al.[2] simulated the flo…
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| 关 键 词： | CUSP磁场 提拉法 晶体生长 单晶硅 传热 氧运输 数值模拟 |
| 收稿时间： | 2004-10-11 |
| 修稿时间： | 2004-10-112005-08-01 |
Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field |
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| Huiping YU, Jing WANG, Yunkang SUI, Xiaolin DAI,Guoping AN. Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field[J]. Chinese Journal of Chemical Engineering, 2006, 14(1): 8-14. DOI: 10.1016/S1004-9541(06)60031-1 |
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| Authors: | Huiping YU Jing WANG Yunkang SUI Xiaolin DAI Guoping AN |
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| Affiliation: | aNumerical Simulation Center of Engineering, Beijing University of Technology, Beijing 100022, China;bGeneral Research Institute for Nonferrous Metals, Beijing 100088, China |
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| Abstract: | Simulations of heat transfer and oxygen transport during a Czochralski growth of silicon with and without a cusp magnetic field were carried out. A finite volume method with a low-Reynolds number K-ε model proposed by Jones-Launder was employed. The numerical results were compared with the experimental data in the literature. It is found that the calculated results are in good agreement with the experimental data. |
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| Keywords: | Czochralski magnetic field turbulent model silicon |
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