| 一种低功耗BiCMOS带隙基准电压源的设计 |
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| 引用本文： | 李龙镇.一种低功耗BiCMOS带隙基准电压源的设计[J].延边大学理工学报,2010,36(3):254-256. |
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| 作者姓名： | 李龙镇 |
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| 作者单位： | 延边大学工学院,计算机科学与技术系,吉林,延吉,133002 |
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| 摘 要： | 设计了一种采用0.25μm BiCMOS工艺的带隙基准电压源电路和一种不使用多晶硅电阻的启动电路,整个电路具有低功耗和工作电压低的特点.HSpice模拟仿真结果表明,在-40~90℃温度范围内的各种工艺条件下,其输出电压数值精准.
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| 关 键 词： | BiCMOS 带隙基准电压源 启动电路 低功耗 |
Design of Low Power Bandgap Voltage Reference |
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| LI Long-zhen.Design of Low Power Bandgap Voltage Reference[J].Journal of Yanbian University (Natural Science),2010,36(3):254-256. |
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| Authors: | LI Long-zhen |
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| Affiliation: | LI Long-zhen(Department of Computer Science and Technology,College of Engineering,Yanbian University,Yanji 133002,China) |
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| Abstract: | A bandgap voltage reference circuit which is used the 0.25 μm BiCMOS process was presented,and the start-up circuit which is not used the polysilicon resistances was presented.The circuit can work in low voltage and low power.The simulation result of HSpice shows that the system has good results in the-40~90 ℃ temperature range and every processes. |
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| Keywords: | BiCMOS |
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