Antiferromagnetic manganite La1/3Ca2/3MnO3 as barrier material in superconductor/insulator/ferromagnet tunnel junctions

Current transport through thin antiferromagnetic (AF) barriers of the perovskita manganite La_1/3Ca_2/3MnO₃ (LCMO) was studied with respect to its dependence on temperature and voltage. Planar-type La_2/3Ca_1/3MnO₃(~ 80 nm)/La_1/3Ca_2/3MnO₃(~ 7 nm)/YBa₂Cu₃O_7 − δ(~ 100 nm) heterojunctions were used as basic structures. The current-voltage (I-V) measurements were carried out on test junctions with a standard area of 20 × 40 µm² in a four-terminal configuration. In spite of the carefully controlled growth conditions, barriers with the same nominal thickness showed different electrical behavior varying from elastic tunneling to Mott variable range hopping (VRH) via localized states. The different transport characteristics seem to be related to intrinsic difference in microstructure as the average surface roughness of the constituent layers may already be larger than the thickness of the barrier itself.