| 湿氢法开管镓扩散 |
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| 引用本文： | 林玉松,李萍. 湿氢法开管镓扩散[J]. 半导体学报, 1988, 9(5): 459-464 |
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| 作者姓名： | 林玉松 李萍 |
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| 作者单位： | 山东师范大学半导体所 济南(林玉松)，山东师范大学半导体所 济南(李萍) |
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| 摘 要： | 本文提出了湿氢法开管镓扩散工艺,采用此工艺在硅片中进行扩散,其工艺重复性、均匀性、一致性良好.用该工艺制造的高反压晶体管,电气特性参数均优于现行的涂层硼铝扩散工艺的结果.
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| 关 键 词： | 湿氢 镓扩散 晶体管 |
Wet-Hydrosen Ambient Open-Tube Gallium Diffusion Technique |
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| Lin Yusong/Institute of Semiconductors,Shandong Normal UniversityLi Ping/Institute of Semiconductors,Shandong Normal University. Wet-Hydrosen Ambient Open-Tube Gallium Diffusion Technique[J]. Chinese Journal of Semiconductors, 1988, 9(5): 459-464 |
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| Authors: | Lin Yusong/Institute of Semiconductors Shandong Normal UniversityLi Ping/Institute of Semiconductors Shandong Normal University |
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| Abstract: | The wet-hydrogen ambient open-tube gallium diffusion technique is presented.By usingthis technique in silicon wafer diffusion,the experimental processing parameters such as re-petitiveness,homogeneity and uniformity are optimized.In application,the electrical charac-teristics of the high break-down voltage transistors fabricated by this technique are much betterthan those fabricated by the currently used boron-alluminium coated diffusion technique. |
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| Keywords: | Wet-hydrongen Gallium diffusion Transistor |
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