双掺硅片热氧化后形成p-n结的结深研究

本文着重研究双掺硅片热氧化后形成p-n结的结深规律.在理论上导出了p-n结的结深表达式:在一定的温度下,结深与氧化热处理时间的平方根成正比;并且与p型和n型杂质的掺杂比v有关,随着v增大,结深减小,实验结果与该式反映的规律基本吻合.

An Investigation on the p-n Junction Depth of Dual-Dopant Si Single Crystal Wafers Formed after Thermal Oxidation

This paper studies the p-n junction depth of dual-dopant Si single crystal wafers formed after thermal oxidation. A simple expression of junction depth is derived. The expression shows that the junction depth is directly proportional to the squear root of oxidation time and related to the doping ratio v of p-type and n-type impurities at certain temperature. The junction depth obtained decreases with increasing doping ratio. Experimental results are consistent approximately with the theory.