首页 | 本学科首页   官方微博 | 高级检索  
     


Modelling and Simulation of Design Variants for the Development of 4H-SiC Thyristors
Authors:Arshad  Maria  Jamil  Erum  Shuja  Ahmed  Qayyum  Faraz  Hassan  Gul
Affiliation:1.Center for Advanced Electronics and Photovoltaic Engineering (CAEPE), International Islamic University, Islamabad, 44000, Pakistan
;2.Department of Electrical Engineering, International Islamic University, Islamabad, 44000, Pakistan
;
Abstract:Silicon - Wide band-gap semiconductor materials such as SiC have created a contemporaneous worldwide interest in high power electronic applications and boosted the research possibilities....
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号