不同的制作方法对ZnO-TTFT光学特性的影响

采用磁控溅射和电子束热蒸发方法制备了ZnO-TTFT(ZnO基透明薄膜晶体管)器件,通过XRD和透射光谱对两种不同制作方法的样品性质进行分析比较,得出采用溅射法制备的ZnO-TTFT器件有源层的ZnO薄膜从结晶化程度、表面粗糙度及透过率都较采用电子束蒸发制得的ZnO薄膜优异,制得器件的有源层有较好的c-axis(002)方向择优取向,器件的平均透过率在85%以上。研究了退火处理对器件性能的影响,发现快速热退火有利于改善薄膜的晶化,降低缺陷态密度,提高器件的透光性。

Influence of Different Deposition Method on Optical Properties of ZnO-TTFT

A novel transparent ZnO based on transparent thin-film transistor was fabricated by rf reactive magnetron sputtering and electron beam evaporating, respectively. By comparison of the samples prepared by different deposition method through XRD and transmittance spectra, it was concluded that crystallization, surface modality and optical transmission of active layer of ZnO-TTFT device prepared by magnetron sputtering were better than those of the device fabricated by electron beam evaporating, the device had better c-axis (002) oriented of the ZnO thin film,and average optical transmittance of the device reached upwards 85 %. Anneal influence on the device was also studied, it was found that anneal is favourable for crystallization of ZnO thin film and can reduce density of defect states and increase transparent characteristics of ZnO-TTFT device.