Properties of polysilicon films annealed by a rapid thermal annealing process

This paper describes the electrical and mechanical properties of polysilicon films annealed by a rapid thermal annealing (RTA) process. The results show that doped polysilicon films annealed by RTA process have conductivity below 100 ω sq⁻¹. This is sufficient for application for integrated micromechanical structures. Also, the stress non-uniformity, as well as the average stress in polysilicon films annealed by RTA, is acceptable for manufacturing flat cantilever beams. The average stress of 2 μm polysilicon films is compressive and typically less than 200 MPa.