|
|||||
|
|
Influence of Thermal History on Crystal Nucleation in Silicon Carbide Amorphized with Neon Irradiation |
|
| Authors: | Jun Aihara Masahiro Ishihara Kiichi Hojou Shigemi Furuno |
| Affiliation: | Department of Advanced Nuclear Heat Technology Japan Atomic Energy Research Institute, Ibaraki-ken, Japan;Technology and Department of Materials Science, Japan Atomic Energy Research Institute, Ibaraki-ken, Japan;Research Organization for Information Science and Technology, Ibaraki-ken, Japan |
| Abstract: | Silicon carbide (SiC) specimens were amorphized with neon ions and annealed at 1273 K via transmission electron microscopy (TEM). Two types of annealing procedures were conducted: (i) continuous annealing for 60 min and (ii) annealing for 5 min, repeated 10 times. TEM observations revealed that crystal nucleation was more apt to occur in the SiC amorphized by repeated annealing than in the continuously annealed SiC. |
| Keywords: | crystal/crystallization nucleation silicon carbide |