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Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory |
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| Authors: | Min-Gyu SungSook Joo Kim Moon Sig JooJae Sung Roh Cheolhwi RyuSeunghun Hong Heonho KimYong Soo Kim |
| Affiliation: | a Memory R&D Division, Hynix Semiconductor Inc., San 136-1, Ichon-si, Kyoungki-do 467-701, Republic of Korea b Graduate School Department of Green Energy, Hoseo University,165 Sechul, Asan-Si, Chungnam 336-795, Republic of Korea c Department of Physics and Astronomy, Seoul National University, Shilim-Dong, Kwanak-Gu, Seoul 151-747, Republic of Korea d Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, P.O. Box 18, Ulsan 680-749, Republic of Korea |
| Abstract: | Resistive memory switching behavior depending on voltage sweep direction is studied by intentionally creating oxygen vacancies within titanium dioxide (TiO2). By inserting a reactive Ti layer on the TiO2, oxygen deficient TiO2−x layer is created, which then causes TiO2−x/TiO2 which has an oxygen vacancy gradient. This gradient of oxygen vacancy makes it possible to create an insulating TiO2 layer on the bottom electrode during the first reset with a negative bias at the top electrode. This insulating layer makes counterclockwise directional bipolar switching more stable. On the other hand, under the clockwise directional voltage sweeping, the first set switching is prevented by the insulating TiO2 layers created during the first and second reset, which leads to a short circuit due to local heating eventually. |
| Keywords: | Resistive switching memory Oxygen vacancy Interfacial reaction Switching mechanism |
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